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Details for article 5476 of 6539 found articles
| Title: |
Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method |
| Author: |
Asghar, M. Iqbal, F. Faraz, S.M. Jokubavicius, V. Wahab, Q. Syväjärvi, M. |
| Appeared in: |
Physica. B, Condensed matter |
| Paging: | Volume 407 (2012) nr. 15 pages 3 p. |
| Year: |
2012 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 5476 of 6539 found articles
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