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                                       Details for article 4730 of 6539 found articles
 
 
  Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation
 
 
Title: Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation
Author: Ohyama, H.
Takakura, K.
Uemura, K.
Shigaki, K.
Kudou, T.
Arai, M.
Kuboyama, S.
Matsuda, S.
Kamezawa, C.
Simoen, E.
Claeys, C.
Appeared in: Physica. B, Condensed matter
Paging: Volume 376-377 (2006) nr. C pages 3 p.
Year: 2006
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 4730 of 6539 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands