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                                       Details for article 4035 of 6539 found articles
 
 
  N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality
 
 
Title: N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality
Author: Zhang, Hengfang
Paskov, Plamen P.
Kordina, Olof
Chen, Jr-Tai
Darakchieva, Vanya
Appeared in: Physica. B, Condensed matter
Paging: Volume 580 () nr. C pages p.
Year: 2020
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 4035 of 6539 found articles
 
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