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Details for article 4990 of 6539 found articles
| Title: |
Simulation of IPV effect in In-doped c-Si with optimized indium concentration and layer thickness |
| Author: |
Sahoo, Hari Sankar Yadav, Abhimanyu Kumar Ray, Abhijit |
| Appeared in: |
Physica. B, Condensed matter |
| Paging: | Volume 406 (2011) nr. 22 pages 6 p. |
| Year: |
2011 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4990 of 6539 found articles
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