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  A comparison of extended defect formation induced by ion implantation in (0001) and (11 2 ̄ 0) 4H-SiC
 
 
Title: A comparison of extended defect formation induced by ion implantation in (0001) and (11 2 ̄ 0) 4H-SiC
Author: Wong-Leung, J
Linnarsson, M.K
Svensson, B.G
Appeared in: Physica. B, Condensed matter
Paging: Volume 340-342 (2003) nr. C pages 5 p.
Year: 2003
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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 Koninklijke Bibliotheek - National Library of the Netherlands