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Details for article 18010 of 18303 found articles
| Title: |
Verification of Fowler–Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC and n
+ poly-Si/SiO2/n-4H SiC MOS devices by different models |
| Author: |
Kodigala, Subba Ramaiah |
| Appeared in: |
Physica. B, Condensed matter |
| Paging: | Volume 500 (2016) nr. C pages 9 p. |
| Year: |
2016 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 18010 of 18303 found articles
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