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Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions |
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Titel: |
Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions |
Auteur: |
Ohshima, Takeshi Uedono, Akira Abe, Hiroshi Chen, Z.Q. Itoh, Hisayoshi Yoshikawa, Masahito Abe, Koji Eryu, Osamu Nakashima, Kenshiro |
Verschenen in: |
Physica. B, Condensed matter |
Paginering: |
Jaargang 308-310 (2001) nr. C pagina's 4 p. |
Jaar: |
2001 |
Inhoud: |
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Uitgever: |
Elsevier Science B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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