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                                       Details for article 7122 of 18303 found articles
 
 
  Hydrogen-related defects in Al2O3 layers grown on n-type Si by the atomic layer deposition technique
 
 
Title: Hydrogen-related defects in Al2O3 layers grown on n-type Si by the atomic layer deposition technique
Author: Kolkovsky, Vl.
Stübner, R.
Appeared in: Physica. B, Condensed matter
Paging: Volume 535 (2018) nr. C pages 171-174
Year: 2018
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 7122 of 18303 found articles
 
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