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Investigation of structural defects of thick GaN grown by flow-modulated hydride vapor-phase epitaxy |
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Title: |
Investigation of structural defects of thick GaN grown by flow-modulated hydride vapor-phase epitaxy |
Author: |
Zhang, Wei Alves, Helder R. Riemann, Till Heuken, M. Veit, Peter Meister, Dirk Kriegseis, Wilhelm Hofmann, Detlev M. Christen, Juergen Meyer, Bruno K. |
Appeared in: |
Physica. B, Condensed matter |
Paging: |
Volume 308-310 (2001) nr. C pages 4 p. |
Year: |
2001 |
Contents: |
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Publisher: |
Elsevier Science B.V. |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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