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                                       Details for article 8093 of 18303 found articles
 
 
  Investigation of structural defects of thick GaN grown by flow-modulated hydride vapor-phase epitaxy
 
 
Title: Investigation of structural defects of thick GaN grown by flow-modulated hydride vapor-phase epitaxy
Author: Zhang, Wei
Alves, Helder R.
Riemann, Till
Heuken, M.
Veit, Peter
Meister, Dirk
Kriegseis, Wilhelm
Hofmann, Detlev M.
Christen, Juergen
Meyer, Bruno K.
Appeared in: Physica. B, Condensed matter
Paging: Volume 308-310 (2001) nr. C pages 4 p.
Year: 2001
Contents:
Publisher: Elsevier Science B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 8093 of 18303 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands