|
Plasma treatment for chemical SiOx enables excellent passivation of p-type polysilicon passivating contact featuring the lowest J 0 of ∼6 fA/cm2 |
|
|
|
Titel: |
Plasma treatment for chemical SiOx enables excellent passivation of p-type polysilicon passivating contact featuring the lowest J 0 of ∼6 fA/cm2 |
Auteur: |
Xing, Haiyang Liu, Zunke Yang, Zhenhai Liao, Mingdun Wu, Qinqin Lin, Na Liu, Wei Ding, Chuanfan Zeng, Yuheng Yan, Baojie Ye, Jichun |
Verschenen in: |
Solar energy materials and solar cells |
Paginering: |
Jaargang 257 () nr. C pagina's p. |
Jaar: |
2023 |
Inhoud: |
|
Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
|
|
|
|