Ultrathin Ge epilayers on Si produced by low-temperature PECVD acting as virtual substrates for III-V / c-Si tandem solar cells
Titel:
Ultrathin Ge epilayers on Si produced by low-temperature PECVD acting as virtual substrates for III-V / c-Si tandem solar cells
Auteur:
Ghosh, Monalisa Bulkin, Pavel Silva, François Johnson, Erik V. Florea, Ileana Funes-Hernando, Daniel Tanguy, Alexandre Renard, Charles Vaissiere, Nicolas Decobert, Jean García, Iván Rey-Stolle, Ignacio Roca i Cabarrocas, Pere