N-type doping of SiC-passivated Ge by pulsed laser melting towards the development of interdigitated back contact thermophotovoltaic devices
Titel:
N-type doping of SiC-passivated Ge by pulsed laser melting towards the development of interdigitated back contact thermophotovoltaic devices
Auteur:
Jiménez, A. Napolitani, E. Datas, A. Martín, I. López, G. Cabero, M. Sgarbossa, F. Milazzo, R. Carturan, S.M. de Salvador, D. García, I. Ryu, Y.K. Martínez, J. del Cañizo, C.