Incorporation of ZnIn2S4 semiconductors with S-vacancy engineered MoS2 nanosheets to develop sensitive photoelectrochemical aptasensor for aflatoxin B1 detection
Titel:
Incorporation of ZnIn2S4 semiconductors with S-vacancy engineered MoS2 nanosheets to develop sensitive photoelectrochemical aptasensor for aflatoxin B1 detection
Auteur:
Qian, Jing Liu, Yue Cui, Haining You, Fuheng Yang, Huiyuan Wang, Kun Wei, Jie Long, Lingliang Wang, Chengquan