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Journal description
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Details for article 40 of 75 found articles
| Title: |
N+-p diodes in InP formed by implantation of Ge+ or Se+ and rapid thermal annealing |
| Author: |
Kringhøj, Per |
| Appeared in: |
Materials science and engineering. B, Solid-state materials for advanced technology |
| Paging: | Volume 9 (1991) nr. 1-3 pages 4 p. |
| Year: |
1991 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 40 of 75 found articles
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