Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
Titel:
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
Auteur:
Savkina, N.S. Lebedev, A.A. Davydov, D.V. Strel'chuk, A.M. Tregubova, A.S. Raynaud, C. Chante, J.-P. Locatelli, M.-L. Planson, D. Milan, J. Godignon, P. Campos, F.J. Mestres, N. Pascual, J. Brezeanu, G. Badila, M.
Verschenen in:
Materials science and engineering. B, Solid-state materials for advanced technology