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                                       Details for article 10 of 11 found articles
 
 
  Transmission electron microscopic studies of GaN grown on silicon carbide and sapphire by laser induced molecular beam epitaxy
 
 
Title: Transmission electron microscopic studies of GaN grown on silicon carbide and sapphire by laser induced molecular beam epitaxy
Author: Zhou, H.
Phillipp, F.
Gross, M.
Schröder, H.
Appeared in: Materials science and engineering. B, Solid-state materials for advanced technology
Paging: Volume 68 (1999) nr. 1 pages 9 p.
Year: 1999
Contents:
Publisher: Elsevier Science S.A.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 10 of 11 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands