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Al doping concentration effects in HfO2 ferroelectric memory fabricated via low-temperature PDA annealing |
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Titel: |
Al doping concentration effects in HfO2 ferroelectric memory fabricated via low-temperature PDA annealing |
Auteur: |
Guo, Yumeng Pan, Zhong Zhang, Junzhe Wang, Fucheng Chen, Jingwen Jang, Yunhui Kim, Yong-Sang Song, Jang-Kun Khokhar, Muhammad Quddamah Yi, Junsin |
Verschenen in: |
Materials science and engineering. B, Solid-state materials for advanced technology |
Paginering: |
Jaargang 320 () nr. C pagina's p. |
Jaar: |
2025 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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