Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects
Titel:
Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects
Auteur:
Pan, W. Sapkota, K.R. Lu, P. Muhowski, A.J. Martinez, W.M. Sovinec, C.L.H. Reyna, R. Mendez, J.P. Mamaluy, D. Hawkins, S.D. Klem, J.F. Smith, L.S.L. Temple, D.A. Enderson, Z. Jiang, Z. Rossi, E.
Verschenen in:
Materials science and engineering. B, Solid-state materials for advanced technology