|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 31 of 33 found articles
| Title: |
The role of inversion domain boundaries in fabricating crack-free GaN films on sapphire substrates by hydride vapor phase epitaxy |
| Author: |
Ahn, Yong Nam Lee, Sung Hoon Lim, Sung Keun Woo, Kwang Je Kim, Hyunbin |
| Appeared in: |
Materials science and engineering. B, Solid-state materials for advanced technology |
| Paging: | Volume 193 (2015) nr. C pages 7 p. |
| Year: |
2015 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 31 of 33 found articles
| << previous | next >> |