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Hydrogen incorporation into GaAs, InP and related compounds during epitaxial growth and device processing |
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Titel: |
Hydrogen incorporation into GaAs, InP and related compounds during epitaxial growth and device processing |
Auteur: |
Pearton, S.J. Abernathy, C.R. Hobson, W.S. Ren, F. Fullowan, T.R. Lopata, J. Chakrabarti, U.K. Stavola, M. Kozuch, D.M. |
Verschenen in: |
Materials science and engineering. B, Solid-state materials for advanced technology |
Paginering: |
Jaargang 13 (1992) nr. 2 pagina's 5 p. |
Jaar: |
1992 |
Inhoud: |
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Uitgever: |
Published by Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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