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                                       Details for article 41 of 46 found articles
 
 
  Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
 
 
Title: Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
Author: Camiola, Vito Dario
Mascali, Giovanni
Romano, Vittorio
Appeared in: Mathematical and computer modelling
Paging: Volume 58 (2013) nr. 1-2 pages 23 p.
Year: 2013
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 41 of 46 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands