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                                       Details for article 38 of 41 found articles
 
 
  Triple and quadruple metal gate work function engineering to improve the performance of junctionless double surrounding gate In0.53Ga0.47As nanotube MOSFET for the upcoming Sub 3 nm technology node
 
 
Title: Triple and quadruple metal gate work function engineering to improve the performance of junctionless double surrounding gate In0.53Ga0.47As nanotube MOSFET for the upcoming Sub 3 nm technology node
Author: Sanjay,
Kumar, Vibhor
Vohra, Anil
Appeared in: Physics letters. A
Paging: Volume 527 () nr. C pages p.
Year: 2024
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 38 of 41 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands