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                                       Details for article 33 of 72 found articles
 
 
  LEELS study of the formation of the AG-semiconductor (Si. Ge.A3B5) interface at 10K
 
 
Title: LEELS study of the formation of the AG-semiconductor (Si. Ge.A3B5) interface at 10K
Author: Aristov, V.Yu.
Bolotin, I.L.
Grazhulis, V.A.
Zhilin, V.M.
Appeared in: Journal of electron spectroscopy and related phenomena
Paging: Volume 52 (1990) nr. C pages 7 p.
Year: 1990
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 33 of 72 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands