Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China
Titel:
Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China
Auteur:
Fan, Y.Y. Alderweireldt, S. Agapopoulou, C. Atanov, N. Ayoub, M. Kassem Caforio, D. Chen, H. Christie, S. da Costa, J.G. Cui, H. d’Amen, G. Davydov, Y. Kiuchi, R. Ferreira, A.S.C. Galloway, Z. Garau, M. García, L.C. Ge, J. Gee, C. Giacomini, G. Gkoukousis, V. Grieco, C. Guindon, S. Han, D. Han, S. Huang, Y. Jin, Y. Jing, M. Kuwertz, E. Labitan, C. Leite, M. Li, B. Liang, H. Liang, Z. Liu, B. Liu, J. Lockerby, M. Lyu, F. Makovec, N. Mazza, S.M. Martinez-Mckinney, F. Nikolic, I. Padilla, R. Qi, B. Ran, K. Ren, H. Rizzi, C. Rossi, E. Sacerdoti, S. Sadrozinski, H.F.-W. Saito, G.T. Schumm, B. Seiden, A. Shan, L. Shi, L. Tan, Y. Tricoli, A. Trincaz-Duvoid, S. Wilder, M. Wu, K. Wyatt, W. Shi, X. Yang, T. Yang, Y. Yu, C. Zhang, X. Zhao, L. Zhao, M. Zhao, Y. Zhao, Z. Zheng, X. Zhuang, X.
Verschenen in:
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment