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Investigation of radiation hardness improvement by applying back-gate bias for FD-SOI MOSFETs |
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Titel: |
Investigation of radiation hardness improvement by applying back-gate bias for FD-SOI MOSFETs |
Auteur: |
Kurachi, Ikuo Kobayashi, Kazuo Okihara, Masao Kasai, Hiroki Hatsui, Takaki Hara, Kazuhiko Miyoshi, Toshinobu Arai, Yasuo |
Verschenen in: |
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment |
Paginering: |
Jaargang 924 (2019) nr. C pagina's 404-408 |
Jaar: |
2019 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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