Development of n-on-p silicon sensors for very high radiation environments
Titel:
Development of n-on-p silicon sensors for very high radiation environments
Auteur:
Unno, Y. Affolder, A.A. Allport, P.P. Bates, R. Betancourt, C. Bohm, J. Brown, H. Buttar, C. Carter, J.R. Casse, G. Chen, H. Chilingarov, A. Cindro, V. Clark, A. Dawson, N. DeWilde, B. Dolezal, Z. Eklund, L. Fadeyev, V. Ferrere, D. Fox, H. French, R. Garcia, C. Gerling, M. Gonzalez Sevilla, S. Gorelov, I. Greenall, A. Grillo, A.A. Hamasaki, N. Hara, K. Hatano, H. Hoeferkamp, M. Hommels, L.B.A. Ikegami, Y. Jakobs, K. Kamada, S. Kierstead, J. Kodys, P. Kohler, M. Kohriki, T. Kramberger, G. Lacasta, C. Li, Z. Lindgren, S. Lynn, D. Mikestikova, M. Maddock, P. Mandic, I. Marti i Garcia, S. Martinez-McKinney, F. Maunu, R. McCarthy, R. Metcalfe, J. Mikuz, M. Minano, M. Mitsui, S. O'Shea, V. Paganis, S. Parzefall, U. Puldon, D. Robinson, D. Sadrozinski, H.F.-W. Sattari, S. Schamberger, D. Seidel, S. Seiden, A. Terada, S. Toms, K. Tsionou, D. Von Wilpert, J. Wormald, M. Wright, J. Yamada, M. Yamamura, K.
Verschenen in:
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment