|
Ionization damage in NPN transistors caused by lower energy electrons |
|
|
|
Titel: |
Ionization damage in NPN transistors caused by lower energy electrons |
Auteur: |
Li, Xingji Xiao, Jingdong Liu, Chaoming Zhao, Zhiming Geng, Hongbin Lan, Mujie Yang, Dezhuang He, Shiyu |
Verschenen in: |
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment |
Paginering: |
Jaargang 621 () nr. 1-3 pagina's 707-712 |
Jaar: |
2010 |
Inhoud: |
|
Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
|
|
|
|