Development of deep N-well monolithic active pixel sensors in a 0.13 μ m CMOS technology
Titel:
Development of deep N-well monolithic active pixel sensors in a 0.13 μ m CMOS technology
Auteur:
Bettarini, S. Bardi, A. Batignani, G. Bosi, F. Calderini, G. Cenci, R. Dell’Orso, M. Forti, F. Giannetti, P. Giorgi, M.A. Lusiani, A. Marchiori, G. Morsani, F. Neri, N. Paoloni, E. Rizzo, G. Walsh, J. Andreoli, C. Pozzati, E. Ratti, L. Speziali, V. Manghisoni, M. Re, V. Traversi, G. Bosisio, L. Giacomini, G. Lanceri, L. Rachevskaia, I. Vitale, L. Bruschi, M. Giacobbe, B. Semprini, N. Spighi, R. Villa, M. Zoccoli, A. Gamba, D. Giraudo, G. Mereu, P. Dalla Betta, G.F. Soncini, G. Fontana, G. Pancheri, L. Verzellesi, G.
Verschenen in:
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment