Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors
Titel:
Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors
Auteur:
Swartz, M. Chiochia, V. Allkofer, Y. Bortoletto, D. Cremaldi, L. Cucciarelli, S. Dorokhov, A. Hörmann, C. Kim, D. Konecki, M. Kotlinski, D. Prokofiev, K. Regenfus, C. Rohe, T. Sanders, D.A. Son, S. Speer, T.
Verschenen in:
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment