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Characterization of as-grown and heavily irradiated GaN epitaxial structures by photoconductivity and photoluminescence |
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Titel: |
Characterization of as-grown and heavily irradiated GaN epitaxial structures by photoconductivity and photoluminescence |
Auteur: |
Gaubas, E. Juršėnas, S. Tomašiūnas, R. Vaitkus, J. Žukauskas, A. Blue, A. Rahman, M. Smith, K.M. |
Verschenen in: |
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment |
Paginering: |
Jaargang 546 (2005) nr. 1-2 pagina's 5 p. |
Jaar: |
2005 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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