Characterization of charge generated in silicon carbide n+p diodes using transient ion beam-induced current
Titel:
Characterization of charge generated in silicon carbide n+p diodes using transient ion beam-induced current
Auteur:
Ohshima, T. Satoh, T. Oikawa, M. Yamakawa, T. Onoda, S. Wakasa, T. Laird, J.S. Hirao, T. Kamiya, T. Itoh, H. Kinoshita, A. Tanaka, R. Nakano, I. Iwami, M. Fukushima, Y.
Verschenen in:
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment