High-gain phototransistors on high-resistivity silicon substrate
Titel:
High-gain phototransistors on high-resistivity silicon substrate
Auteur:
Batignani, G. Bisogni, M.G. Boscardin, M. Bosisio, L. Dalla Betta, G.F. Del Guerra, A. Dittongo, S. Forti, F. Giorgi, M. Han, D.J. Linsalata, S. Marchiori, G. Piemonte, C. Rachevskaia, I. Ronchin, S.
Verschenen in:
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment