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Epitaxial structures based on compensated GaAs for γ- and X-ray detectors |
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Titel: |
Epitaxial structures based on compensated GaAs for γ- and X-ray detectors |
Auteur: |
Budnitsky, D.L. Germogenov, V.P. Guschin, S.M. Larionov, A.A. Porokhovnichenko, L.P. Potapov, A.I. Tolbanov, O.P. Vorobiev, A.P. |
Verschenen in: |
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment |
Paginering: |
Jaargang 466 (2001) nr. 1 pagina's 6 p. |
Jaar: |
2001 |
Inhoud: |
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Uitgever: |
Published by Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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