Thick film SOI technology: characteristics of devices and performance of circuits for high-energy physics at cryogenic temperatures; effects of ionizing radiation
Titel:
Thick film SOI technology: characteristics of devices and performance of circuits for high-energy physics at cryogenic temperatures; effects of ionizing radiation
Auteur:
Fourches, N Abbon, Ph Chipaux, R Delagnes, E Orsier, E Pailler, P du Port de Pontcharra, J Rouger, M Sueur, M Truche, R
Verschenen in:
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment