Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors
Titel:
Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors
Auteur:
Ziock, H.-J. Holzscheiter, K. Morgan, A. Palounek, A.P.T. Ellison, J. Heinson, A.P. Mason, M. Wimpenny, S.J. Barberis, E. Cartiglia, N. Grillo, A. O'Shaughnessy, K. Rahn, J. Rinaldi, P. Rowe, W.A. Sadrozinski, H.F.-W. Seiden, A. Spencer, E. Webster, A. Wichmann, R. Wilder, M. Frautschi, M.A. Matthews, J.A.J. McDonald, D. Skinner, D. Coupal, D. Pal, T.
Verschenen in:
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment