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Investigation of the Boron removal effect induced by 5.5MeV electrons on highly doped EPI- and Cz-silicon |
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Titel: |
Investigation of the Boron removal effect induced by 5.5MeV electrons on highly doped EPI- and Cz-silicon |
Auteur: |
Liao, C. Fretwurst, E. Garutti, E. Schwandt, J. Makarenko, L. Pintilie, I. Filip, Lucian D. Himmerlich, A. Moll, M. Gurimskaya, Y. Li, Z. |
Verschenen in: |
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment |
Paginering: |
Jaargang 1056 () nr. C pagina's p. |
Jaar: |
2023 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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