Details van artikel 103 van 106 gevonden artikelen
Timing performance and gain degradation after irradiation with protons and neutrons of Low Gain Avalanche Diodes based on a shallow and broad multiplication layer in a float-zone 35 μ m and 50 μ m thick silicon substrate
Titel:
Timing performance and gain degradation after irradiation with protons and neutrons of Low Gain Avalanche Diodes based on a shallow and broad multiplication layer in a float-zone 35 μ m and 50 μ m thick silicon substrate
Auteur:
Currás, E. Doblas, A. Fernández, M. Flores, D. González, J. Hidalgo, S. Jaramillo, R. Moll, M. Navarrete, E. Pellegrini, G. Vila, I.
Verschenen in:
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment
Paginering:
Jaargang 1055 () nr. C pagina's p.
Jaar:
2023
Inhoud:
Uitgever:
The Author(s)
Bronbestand:
Elektronische Wetenschappelijke Tijdschriften
Details van artikel 103 van 106 gevonden artikelen