Charge sensing properties of monolithic CMOS pixel sensors fabricated in a 65 nm technology
Titel:
Charge sensing properties of monolithic CMOS pixel sensors fabricated in a 65 nm technology
Auteur:
Bugiel, Szymon Dorokhov, Andrei Aresti, Mauro Baudot, Jerome Beole, Stefania Besson, Auguste Bugiel, Roma Cecconi, Leonardo Colledani, Claude Deng, Wenjing Di Mauro, Antonello Bitar, Ziad El Goffe, Mathieu Hasenbichler, Jan Hong, Geun Hee Hu-Guo, Christine Jaaskelainen, Kimmo Kluge, Alex Mager, Magnus Marras, Davide de Melo, Joao Munker, Magdalena Pham, Hung Piro, Francesco Reidt, Felix Rinella, Gianluca Aglieri Russo, Roberto Sarritzu, Valerio Senyukov, Serhiy Snoeys, Walter Suljic, Miljenko Usai, Gianluca Valin, Isabelle Winter, Marc Wu, Yitao
Verschenen in:
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment