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                                       Details for article 12 of 21 found articles
 
 
  Range parameters and annealing behaviour of 250–1500 keV high energy boron and phosphorus implantations into silicon
 
 
Title: Range parameters and annealing behaviour of 250–1500 keV high energy boron and phosphorus implantations into silicon
Author: Ellmer, K.
Mertens, A.
Rockoff, A.
Röhrich, J.
Vysek, W.-M.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 62 (1992) nr. 4 pages 7 p.
Year: 1992
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 21 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands