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                                       Details for article 2 of 26 found articles
 
 
  Channeling effects in high energy implantation of N+ in silicon
 
 
Title: Channeling effects in high energy implantation of N+ in silicon
Author: Gasparotto, A.
Carnera, A.
Acco, S.
La Ferla, A.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 62 (1992) nr. 3 pages 5 p.
Year: 1992
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 26 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands