Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 29 of 74 found articles
 
 
  Formation of distant recombination centers in silicon by ion implantation
 
 
Title: Formation of distant recombination centers in silicon by ion implantation
Author: Giedrys, T.
Grivickas, V.
Pranevičius, L.
Ragauskas, A.
Vaitkus, J.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 6 (1985) nr. 1-2 pages 3 p.
Year: 1985
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 29 of 74 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands