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Details for article 30 of 33 found articles
| Title: |
The electrical properties of planar n+−p junctions in InAs produced by S+ ion implantation |
| Author: |
Gerasimenko, N.N. Kuryshev, G.L. Myasnikov, A.M. Obodnikov, V.I. Safronov, L.N. Khryashchev, G.S. |
| Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
| Paging: | Volume 58 (1991) nr. 2 pages 4 p. |
| Year: |
1991 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 30 of 33 found articles
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