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Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing |
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Title: |
Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing |
Author: |
Nikolskaya, A.A. Korolev, D.S. Trushin, V.N. Yunin, P.A. Mikhaylov, A.N. Belov, A.I. Konakov, A.A. Okulich, E.V. Pavlov, D.A. Tetelbaum, D.I. |
Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paging: |
Volume 537 () nr. C pages 60-64 |
Year: |
2023 |
Contents: |
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Publisher: |
Elsevier B.V. |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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