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Journal description
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Details for article 8 of 11 found articles
| Title: |
GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N2 into SiO2/Si and SiNx/Si wafers |
| Author: |
Aggar, L. Bradai, D. Bourezg, Y.I. Abdesselam, M. Chami, A.C. Mocuta, C. Thiaudiere, D. Speisser, C. Muller, D. Bouillet, C. Le Normand, F. |
| Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
| Paging: | Volume 485 () nr. C pages 57-67 |
| Year: |
2020 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 8 of 11 found articles
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