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Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy |
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Titel: |
Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy |
Auteur: |
Kokkoris, M. Androulakaki, E.G. Czyzycki, M. Erich, M. Karydas, A.G. Leani, J.J. Migliori, A. Ntemou, E. Paneta, V. Petrović, S. |
Verschenen in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paginering: |
Jaargang 450 () nr. C pagina's 144-148 |
Jaar: |
2019 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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