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Details for article 3 of 81 found articles
| Title: |
Analysis of defect structure in GaN epilayers doped with implanted Si+ by RBS/c method |
| Author: |
Pągowska, K.D. Kozubal, M. Taube, A. Trajnerowicz, A. Kruszka, R. Gołaszewska-Malec, K. Dynowska, E. Jakieła, R. Barcz, A. |
| Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
| Paging: | Volume 450 () nr. C pages 248-251 |
| Year: |
2019 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 81 found articles
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