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Journal description
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Details for article 11 of 21 found articles
| Title: |
Ion implanted GaN MISFETs fabricated in Mg implanted layers activated by conventional rapid thermal annealing |
| Author: |
Yoshino, Michitaka Sugamata, Kota Ikeda, Kiyoji Nishimura, Tomoaki Kuriyama, Kazuo Nakamura, Tohru |
| Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
| Paging: | Volume 449 (2019) nr. C pages 49-53 |
| Year: |
2019 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 11 of 21 found articles
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