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                                       Details for article 2 of 13 found articles
 
 
  Defect levels induced by double substitution of B and N in 4H-SiC
 
 
Title: Defect levels induced by double substitution of B and N in 4H-SiC
Author: Igumbor, E.
Danga, H.T.
Omotoso, E.
Meyer, W.E.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 442 (2019) nr. C pages 41-46
Year: 2019
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 13 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands