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The quantitative analysis of silicon carbide surface smoothing by Ar and Xe cluster ions |
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Titel: |
The quantitative analysis of silicon carbide surface smoothing by Ar and Xe cluster ions |
Auteur: |
Ieshkin, A.E. Kireev, D.S. Ermakov, Yu.A. Trifonov, A.S. Presnov, D.E. Garshev, A.V. Anufriev, Yu.V. Prokhorova, I.G. Krupenin, V.A. Chernysh, V.S. |
Verschenen in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paginering: |
Jaargang 421 () nr. C pagina's 27-31 |
Jaar: |
2018 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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