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Depth profiles of implanted 18F, 79Br, and 132Xe in silicon in the energy range 85–600 keV |
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Title: |
Depth profiles of implanted 18F, 79Br, and 132Xe in silicon in the energy range 85–600 keV |
Author: |
Tan, Chunyu Xia, Yueyuan Yang, Hong Sun, Xiufang Liu, Jiarui Zheng, Zongshuang Zhu, Peiran |
Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paging: |
Volume 42 (1989) nr. 1 pages 6 p. |
Year: |
1989 |
Contents: |
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Publisher: |
Published by Elsevier B.V. |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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